Photo Transistor, 0.10" Lead Spacing, Lensed for High Sensitivity
Photo Transistor, 0.10" Lead Spacing, Lensed for High Sensitivity
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Photo Transistor, 0.10" Lead Spacing, Lensed for High Sensitivity

08OP501SW
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  • NPN silicon phototransistor mounted in a lensed, clear plastic, end looking package
  • 0.10" Lead Spacing
  • Lensed for high sensitivity

NPN silicon phototransistor mounted in a lensed, clear plastic, end looking package. The lensing effect of the package allows an acceptance half angle of 8° measured from the optical axis to the half power point. Identical to the OP500, except for lead spacing. It is mechanically and spectrally matched to the OP160 and OP260 series of infrared emitting diodes. All electrical parameters are 1000/0 tested by manufacturing. Specifications are guaranteed to a cumulative .65% AQL. Collector current ranges guaranteed to a 2.5% AQL.